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ARCHIVE INFORMATION
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Freescale Semiconductor
RF Product Device Data
MRF9120LR3
Z21
Z19
Z16 Z18
DUT
+
+
RF
INPUT
Z1
RF
OUTPUT
Z26 Z27
C29
B3
Balun 1
Z2 Z4 Z6 Z8 Z12Z10
Z3 Z5 Z7 Z9 Z13Z11
Z17
Z20
Z25
Z24
B4
Z15
Z14
B1 B2
B6
B5
C30
C10
C9
C7
C6
C5
C4
C2
C11
C20
C18
L2
Balun 2
C25 C26 C27
L1
C13
C14
C15
C16
C17
C19
C23 C24 C28
C22
C21
C3
C1
R2
R1
C12
VGG
VDD
VDD
VGG
+
+
+
+
+
+
Figure 1. 880 MHz Broadband Test Circuit Schematic
C8
Z23
Z22
Z14, Z15 0.040″
x 0.630
″
Microstrip
Z16, Z17 0.040″
x 0.630
″
Microstrip
Z18, Z19 0.330″
x 0.630
″
Microstrip
Z20, Z21 0.450″
x 0.630
″
Microstrip
Z22, Z23 0.750″
x 0.220
″
Microstrip
Z24, Z25 0.115″
x 0.420
″
Microstrip
Z26 0.130″
x 0.080
″
Microstrip
Z27 0.350″
x 0.080
″
Microstrip
Z1 0.420″
x 0.080
″
Microstrip
Z2, Z3 0.090″
x 0.420
″
Microstrip
Z4, Z5 0.125″
x 0.220
″
Microstrip
Z6, Z7 0.095″
x 0.220
″
Microstrip
Z8, Z9 0.600″
x 0.220
″
Microstrip
Z10, Z11 0.200″
x 0.630
″
Microstrip
Z12, Z13 0.500″
x 0.630
″
Microstrip
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MRF9120LR5
功能描述:射频MOSFET电源晶体管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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